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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION *With TO-220Fa package *Low collector saturation voltage *High switching speed APPLICATIONS *Switching regulator *DC-DC converter *High frequency power amplifier PINNING PIN 1 2 3 DESCRIPTION Base Collector 2SC3571 * Fig.1 simplified outline (TO-220Fa) and symbol Emitter Absolute maximum ratings (Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 7 15 3.5 30 150 -55~150 UNIT V V V A A A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEX IEBO hFE-1 hFE -2 hFE -3 PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain CONDITIONS IC=3.0A , IB=0.6A,L=1mH IC=3A; IB=0.6A IC=3A; IB=0.6A VCB=400V; IE=0 VCE=400V; VBE=-1.5V Ta=125 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=1A ; VCE=5V IC=3A ; VCE=5V 20 20 10 MIN 400 2SC3571 TYP. MAX UNIT V 1.0 1.2 10 10 1.0 10 80 80 V V A A mA A Switching times ton ts tf Turn-on time Storage time Fall time IC=3.0A;IB1=-IB2=0.6A VCC150V; RL=50 1.0 2.5 1.0 s s s hFE-2 classifications M 20-40 L 30-60 K 40-80 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3571 Fig.2 Outline dimensions (unindicated tolerance:0.15 mm) 3 |
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